Defect distribution along single GaN nanowhiskers.
نویسندگان
چکیده
In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating that the defects responsible for such transitions are distributed inhomogeneously along the column growth direction.
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ورودعنوان ژورنال:
- Nano letters
دوره 6 7 شماره
صفحات -
تاریخ انتشار 2006